The emission microscopy (EMMI) test is proposed as an effective method to control the polysilicon over-etching time of advanced CMOS processing combined with a novel test structure,named a poly-edge structure.
通过结合发光显微镜(EMMI)测试和poly-edge电容测试结构很好地控制了多晶硅刻蚀时间,避免了栅极氧化膜的早期失效。
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