The cost of nitrogen-doped Czochralski silicon is lower than that of the Czochralski silicon.
掺氮直拉单晶硅的成本比普通直拉单晶硅的成本要低,掺氮直拉单晶硅的机械强度比普通直拉单晶硅的高,太阳电池片可以做的更薄,这些都有利于降低太阳电池的成本。
FTIR Sudy on V_2 Defect in Fast Neutron Irradiated CZSi;
快中子辐照直拉硅中V_2的FTIR研究
INVESTIGATION ON OXYGEN PRECIPITATION IN NCZSi;
氮气氛直拉硅中氧沉淀的研究
Control and Utilization of Defect for CZSi Wafer;
直拉硅片杂质缺陷的控制与利用
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