Based on the two-step interface trap buildup model and the statistical thermodynamics mechanism of point defects in solids, a relation between the radiation induced increase of oxide hole-traps and the buildup of interface traps in MOSFET is proposed.
基于界面陷阱形成的氢离子运动两步模型和反应过程的热力学平衡假设,推导了金属-氧化物-半导体-场效应晶体管(MOSFET)经历电离辐照后氧化层空穴俘获与界面陷阱形成间关系的表达式。
本网站所收集内容来自网友分享仅供参考,实际请以各学校实际公布信息为主!内容侵权及错误投诉:1553292129@qq.com
CopyRight © 2020-2024 优校网[www.youxiaow.com]版权所有 All Rights Reserved. ICP备案号:浙ICP备2024058711号