The lowest exciton energy level and the oscillate strength of one exciton in CdS QDs are computed variationally as a function of the quantum dots radius and the third-order susceptibility of semiconductor quantum dots in non-resonant absorption region is studied.
通过变分法计算了量子点激子基态能量和偶极跃迁振子强度,分析了半导体量子点在非本征吸收区的三阶极化率。
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